ESD protection design with turn-on restraining method and structures

ABSTRACT

The present invention is directed to an electrostatic discharge (ESD) device with an improved ESD robustness for protecting output buffers in I/O cell libraries. The ESD device according to the present invention uses a novel I/O cell layout structure for implementing a turn-on restrained method that reduces the turn-on speed of an ESD guarded MOS transistor by adding a pick-up diffusion region and/or varying channel lengths in the layout structure.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention is directed generally to electrostatic discharge(ESD) protection circuits for input/output (I/O) devices, and moreparticularly, to improving ESD robustness in I/O cell libraries usingnovel layout techniques to implement a turn-on retraining arrangementthat reduces the turn-on speed or increases the breakdown voltage of aMOS transistor.

2. Description of the Related Art

The ESD robustness of CMOS integrated circuits (IC) has been found to beseriously degraded due to deep-submicron CMOS technologies. To improvethe ESD robustness of the output transistors, the ESD-implant processand the silicide-blocking process have been widely implemented in thedeep-submicron CMOS technologies. In addition to the processmodification to improve the ESD robustness of the output buffers, thesymmetrical layout structure had been emphasized to realize thelarge-dimension output transistors by ensuring the uniform turn-onphenomenon along the multiple fingers of the output transistor. Tofurther enhance the uniform turn-on phenomenon among the multiplefingers of the output transistors, a gate-coupling design had beenreported to achieve uniform ESD power distribution on large-dimensionoutput transistors.

General circuit diagrams of the output cell, input cell, and I/Obidirectional cell in a cell library are shown in FIGS. 1(a)-(c),respectively. In a general application, the output buffers in a celllibrary have different driving specifications. For instance, the outputbuffers in a typical library may have the different driving capabilitiesof e.g., 2 mA, 4 mA, 8 mA, or 24 mA. To meet these different types ofcurrent specification, different numbers of fingers in the MOS device ofthe cell are provided to drive current to, or sink current from, thepad. An example of the finger numbers of the different I/O cells in a0.35-μm cell library used to provide the driving/sinking current areshown in TABLE 1.

TABLE 1 Current Finger Number Specification xp xn yp yn input cell 0 014 14 4 mA 2 1 12 13 8 mA 4 2 10 12 10 mA 5 3 9 11 14 mA 7 4 7 10 18 mA9 5 5 9 24 mA 12 6 2 8

Wherein W/L=35 μm/0.5 μm for each finger, and the xp (xn) is the numberof fingers in the output PMOS (NMOS) layout, which are used to generatethe output current to the pad.

However, the cell layouts of the output buffers with different drivingcapabilities are all drawn in the same layout style and area forprogrammable application. To adjust different output sinking (driving)currents of the output buffer, different number of fingers of the polygates in the output NMOS (PMOS) are connected to the ground (VDD). Thegeneral layout of the NMOS device in the output cell with the used andunused fingers is shown in FIG. 2(a). The schematic circuit diagram ofthe layout of FIG. 2(a) is shown in FIG. 2(b), where the used NMOSfinger is marked as Mn1 and the unused MOS fingers are lumped as Mn2. Toprovide a small output current, only a poly gate (used MOS finger) isconnected to the pre-buffer circuit to control the NMOS (PMOS) on oroff. The other poly gates are connected to VSS (VDD) to keep them off inthe layout of FIG. 2(a). Such layout structure has been widely used inIC products, especially in the digital IC's.

Due to the asymmetrical connection on the poly-gate fingers of theoutput NMOS in the layout, the ESD turn-on phenomenon among the fingersbecomes quite different even if the layout is still symmetrical. Whensuch an I/O cell with a small output current driving ability is stressedby ESD, the used NMOS Mn1 is often turned on first due to the transientcoupled voltage on its gate. As seen in FIG. 2(b), the ESD voltageapplied to the pad is coupled to the gate of Mn1 and Mn2 by theparasitic drain-to-gate overlapped capacitance (see the dashed line asshown in FIG. 2(b)). The coupled gate voltage is kept at the gate of Mn1by the pre-buffer circuit, but the coupled voltage at the gate of Mn2 isconducted to VSS. Therefore, the Mn2 (with larger device dimension whichis designed to protect Mn1) still remains off but the Mn1 (with asmaller device dimension) is turned on to bypass the ESD current fromthe pad to VSS. This generally causes a very low ESD level for theoutput buffer, even the output buffer has a large device dimension intotal (Mn1+Mn2).

The human body model (HBM) ESD level of an I/O cell library withdifferent driving current specification but the same layout area andlayout style is shown in TABLE 2.

TABLE 2 HBM 2 mA 4 mA 8 mA 12 mA 24 mA ESD Stress Buffer Buffer BufferBuffer Buffer VDD (−) 1.5 KV   2 KV 2.5 KV >2.5 KV >2.5 KV ND Mode VSS(+) 1.0 KV 1.5 KV 2.0 KV >2.5 KV >2.5 KV PS Mode

The test data for two worst cases of ESD-testing pin combinations underthe PS-mode ESD test and ND-mode ESD test are listed in Table 2 for theI/O cells with different output current specifications. According to thedata of Table 2, it is concluded that when the output cell has a higheroutput current driving ability, the ESD level is also higher. However,the I/O cell with an output current of 2 mA only has an ESD level of 1kV, even if the total (Mn1+Mn2) device dimension in every cell is thesame. To verify the location of ESD damage on the I/O cell with asmaller output current, the ESD-stressed IC was de-layered to find thefailure location.

The failure locations were found to locate at the Mn1 device of the I/Ocell. However, the Mn2 in the same I/O cell was not damaged by the ESDstress. The detailed analysis on this failure issue is described in thepaper by H. -H. Chang, M. -D. Ker and J. -C. Wu, “Design ofdynamic-floating-gate technique for output ESD protection indeep-submicron CMOS technology,” Solid-State Electronics, vol. 43, pp.375-393, February 1999. This creates a challenge to provide one set ofI/O cells with better ESD level. Typically, the HBM ESD level of everyI/O cell should be greater than 2 kV under any ESD-testing pincombination.

To improve ESD level of the I/O cells with different output currentdriving abilities, the descriptions of the gate-coupled technologies hadbeen reported in publications by, e.g., C. Duvvury and R. N. Rountree,“Output buffer with improved ESD protection,” U.S. Pat. No. 4,855,620(August, 1989); C.-D. Lien, “Electrostatic discharge protectioncircuit,” U.S. Pat. No. 5,086,365 (February, 1992) M.-D. Ker, C.-Y Wu,T. Cheng, C.-N. Wu, and T.-L. Yu, “Capacitor-couple ESD protectioncircuit for submicron CMOS IC,” U.S. Pat. No. 5,631,793 (May, 1997); andH.-H. Chang, M.-D. Ker, K. T. Lee, and W.-H. Huang, “Output ESDprotection using dynamic-floating-gate arrangement,” U.S. Pat. No.6,034,552 (March, 2000).

One of such gate-coupled designs is shown in FIG. 3 (U.S. Pat. No.5,631,793), where the unused Mn2 (Mp2) in the I/O cell with small outputcurrent driving ability is connected to VSS (VDD) through the additionalresistor Rw2 (Rw1). An additional capacitor Cn (Cp) is added andconnected from the pad to the gate of Mn2 (Mp2) to generate the couplingeffect. When a positive (negative) ESD voltage in the PS-mode (ND-mode)ESD test condition is applied to the pad, the overstress voltage iscoupled to the gate of Mn2 (Mp2) through the added capacitor Cn (Cp).The coupled voltage at the gate of Mn2 (Mp2) is kept longer in time bythe resistor Rw2 (Rw1), therefore the unused Mn2 (Mp2) with largerdevice dimension in the cell layout can be triggered on to discharge theESD current. So, the gate-coupled technique is used to turn on the Mn2and Mp2 to discharge ESD current before the Mn1 (Mp1) is damaged by ESD.Because the Mn2 and Mp2 often have much larger device dimensions(channel width of several hundreds of micron), they can sustain a higherESD stress. The more detailed description on the gate-coupled design isprovided in the paper by M.-D. Ker, C.-E. Wu, and H.-H. Chang,“Capacitor-couple ESD protection circuit for deep-submicron low-voltageCMOS ASIC,” IEEE Trans. on VLSI Systems, vol. 4, no.3, pp. 307-321,September, 1996.

Another gate-coupled design to enhance the turn-on of Mn2 and Mp2 isshown in FIG. 4 (U.S. Pat. No. 5,086,365). In FIG. 4, the gate of Mn2(Mp2) is connected to VSS (VDD) through the Mdn1 (Mdp1) device, whichworks as a resistor to sustain the coupled voltage in the gate of Mn2(Mp2). Therefore, the Mn2 (Mp2) can be turned on faster than the Mn1(Mp1). The ESD current is mainly discharged through the unused Mn2 (Mp2)with large device dimension in the I/O cells.

A more complex design, called as the dynamic-floating-gate technique,was also disclosed to improve ESD level of the I/O cells, which is shownin FIG. 5 (U.S. Pat. No. 6,034,552). In this design, a RC circuit isused to delay the turn-on of the Mdn1 (Mdp1), therefore theESD-transient voltage can be coupled and held at the gate of Mn2 (Mp2)within a much longer time period. So, the Mn2 (Mp2) can be moreeffectively turned on to discharge the ESD current from the pad to VSS(VDD). The more detailed principle for this design is disclosed in thepaper by H.-H. Chang, M.-D. Ker and J.-C. Wu, “Design ofdynamic-floating-gate technique for output ESD protection indeep-submicron CMOS technology,” Solid-State Electronics, vol. 43,pp.375-393, February. 1999.

The manufacturing process solutions had been also invented for improvingthe ESD level of such I/O cells. To enhance the turn-on of Mn2, theprocess method with the additional ESD implantation is also provided toreduce the junction breakdown voltage of the Mn2 device, such as thosedisclosed in publications by, e.g., C.-C. Hsue and J. Ko, “Method forESD protection improvement,” U.S. Pat. No. 5,374,565, December 1994; T.A. Lowrey and R. W Chance, “Static discharge circuit having lowbreakdown voltage bipolar clamp,” U.S. Pat. No. 5,581,104, December1996; and K.-Z. Chang and C.-Y Lin, “Method of making ESD protectiondevice structure for low supply voltage applications,” U.S. Pat. No.5,674,761, October 1997.

The NMOS device structure, equivalent circuit, and layout with theadditional ESD-implantation method for I/O cells are shown in FIGS.6(a)-(c), respectively. In FIG. 6(c), the ESD-implantation with a P+doping concentration is implanted under the drain region of the Mn2device, but the Mn1 is not implanted. The Mn2 drain to P-well junctionwith the additional P+ ESD implantation has a lower breakdown voltage.Therefore, the Mn2 can be broken down to discharge ESD current beforethe Mn1. The ESD current discharging path is shown by the dashed line inFIG. 6(a). To realize this purpose, an additional mask layer is used inthe process, and the layout has to be drawn with this ESD-implantationlayer. In the layout of FIG. 6(b), the ESD-implantation regions areadded at the drain regions of Mn2 fingers, but not on the Mn1 finger.Additional process steps and mask have to be added into the process flowto realize such a design.

When the CMOS technology scaled down to sub-half-micron, the voltagelevel of VDD in the chip is also reduced to a lower voltage level.Because the I/O signals come from external circuits of chips in a systemmay have different voltage levels, the high-voltage-tolerant I/Ocircuits are designed and used in such an interface condition. A typical3V/5V-tolerant I/O circuit was described in M. Pelgrom and E. Dijkmans,“A 3/5V compatible I/O buffer,” in IEEE Journal of Solid-State Circuits,vol. 30, no.7, pp. 823-825, July 1995; and W. Anderson and D. Krakaauer,“ESD protection for mixed-voltage I/O using NMOS transistors staked in acascade configuration,” in Proc. Of EOS/ESD Symp., 1998, pp. 54-62.

The design methodology as taught from the above-discussed prior art isfocused exclusively on the unused Mn2 in the I/O cell. Although suchdesign methodology can improve the ESD level of the I/O library, it iscostly and requires additional elements to realize the gate-coupledcircuit or modifications to lower the junction breakdown voltage.

SUMMARY OF THE INVENTION

It is an object of the present invention to provide a semiconductorstructure for ESD protection of an integrated circuit in order toimprove ESD level of the I/O cells with different drivingspecifications.

Another object of the present invention is to provide a semiconductorstructure for improving ESD robustness of the output ESD protectionNMOS/PMOS through an additional pick-up diffusion region and/ormodification of channel length.

A further object of the present invention is to provide a semiconductorstructure for improving ESD robustness of the input ESD protectionNMOS/PMOS.

A still further object of the present invention is to provide asemiconductor structure to improve ESD robustness of the I/O cells byusing different channel lengths in the I/O devices.

In accordance with the present invention, a semiconductor structure forelectrostatic discharge (ESD) protection of a metal-oxide semiconductor(MOS) integrated circuit consists of a p-type substrate forming a basefor the semiconductor structure, a first n-type channel formed betweenfirst N+ regions within the substrate for an Mn1 transistor, and asecond n-type channel formed between second N+ regions within thesubstrate for an Mn2 transistor. In particular, an additional P+ pick-updiffusion region is disposed adjacent to the first N+ regions to reducethe turn-on speed of the first MOS transistor. Alternatively or inaddition to the P+ pick-up diffusion region, the channel lengths of thefirst and second n-typ channels can be varied such that the channellength of the first n-type channel is larger than the channel length ofthe second n-type channel to increase the drain breakdown voltage of thefirst MOS transistor.

In accordance with another aspect of the present invention, thesemiconductor structure is used to protect an internal circuit, outputbuffer, I/O buffer, input cell, or 3V/5V-tolerant I/O cell library ofthe MOS integrated circuit by slowing down the turn-on speed orincreasing the break-down voltage of the output device with smalldriving current ability, such that the ESD-protection device with alarge device dimension can be triggered on to bypass ESD current duringan ESD stress event. Related aspects and advantages of the inventionwill become apparent and more readily appreciated from the followingdetailed description of the invention, taken in conjunction with theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1(a)-(c) are schematic circuit block diagrams showing conventionalcircuit function and device dimension of I/O cells;

FIG. 2(a) is a schematic layout diagram showing a conventional layout ofI/O devices with parallel multiple fingers;

FIG. 2(b) is the schematic circuit block diagram of conventional NMOSdevices in an output cell with small-driving current;

FIG. 3 is a schematic circuit block diagram showing a conventionalgate-coupled technique for improving the ESD robustness of asmall-driving output buffer;

FIG. 4 is a schematic circuit block diagram showing another conventionalgate-coupled technique for improving the ESD robustness of asmall-driving output buffer;

FIG. 5 is a schematic circuit block diagram showing a conventionaldynamic-floating-gate circuit technique for improving the ESD robustnessof a small-driving output buffer;

FIG. 6(a) is a schematic circuit block diagram showing a conventionalESD-implantation process technique for improving the ESD robustness of asmall-driving output buffer;

FIG. 6(b) is a schematic layout diagram showing the conventionalESD-implantation process technique of FIG. 6(a);

FIG. 6(c) is a cross-sectional view schematically showing theconventional ESD-implantation process technique of FIG. 6(a);

FIG. 7(a) is a cross-sectional view schematically showing a preferredembodiment of a small-driving NMOS device in an output cell with anadditional pick-up diffusion region according to the present invention;

FIG. 7(b) is a schematic circuit block diagram showing the preferredembodiment of FIG. 7(a);

FIG. 7(c) is a schematic layout diagram showing the preferred embodimentof FIG. 7(a);

FIG. 8(a) is a cross-sectional view schematically showing a preferredembodiment of a small-driving NMOS device in an output cell withdifferent channel lengths according to the present invention;

FIG. 8(b) is a schematic circuit block diagram showing the preferredembodiment of FIG. 8(a);

FIG. 8(c) is a schematic layout diagram showing the preferred embodimentof FIG. 8(a);

FIG. 9(a) is a cross-sectional view schematically showing a preferredembodiment of a small-driving NMOS device in an output cell withdifferent channel lengths and an additional pick-up diffusion regionaccording to the present invention;

FIG. 9(b) is a schematic layout diagram showing the preferred embodimentof FIG. 9(a);

FIG. 10(a) is a conventional schematic circuit block diagram showing aninput ESD protection NMOS circuit;

FIG. 10(b) is a schematic layout diagram showing the input ESDprotection NMOS circuit of FIG. 10(a);

FIG. 11(a) is a schematic layout diagram showing the preferredembodiment of the input ESD protection NMOS circuit with differentchannel lengths according to the present invention;

FIG. 11(b) is a cross-sectional view schematically showing the preferredembodiment of FIG. 11(a);

FIG. 12(a) is a schematic layout diagram showing the preferredembodiment of the input ESD protection NMOS circuit with additionalpick-up diffusion regions according to the present invention;

FIG. 12(b) is a cross-sectional view schematically showing the preferredembodiment of FIG. 12(a);

FIG. 13 is a schematic layout diagram showing the preferred embodimentof the input ESD protection NMOS circuit with different channel lengthsand additional pick-up diffusion regions according to the presentinvention;

FIG. 14(a) is a schematic circuit block diagram showing a preferredembodiment of a 3V/5V-tolerant I/O cell with different channel lengthsaccording to the present invention; and

FIG. 14(b) is a cross-sectional layout view schematically showing thepreferred embodiment of FIG. 14(a).

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The present invention will now be described by way of preferredembodiments with references to the accompanying drawings. Like numeralsrefer to corresponding parts of various drawings.

Referring now to FIGS. 7(a) and 7(b), one embodiment of the presentinvention is shown in which a simple layout is employed for drawing anadditional P+ pick-up diffusion region 70, which surrounds one of theMOS transistors (Mn1 guarded device) 72 to reduce its parasiticbase-emitter resistance. Therefore, the parasitic BJT in Mn1 has aslower turn-on speed than that of the other MOS transistor (Mn2 ESDprotection device) 74. As shown in FIG. 7(b), a pre-buffer 76 with acore logic 77 is connected to the Mn1 device 72, a pad 78 is connectedto the Mn1 device 72 and Mn2 device 74, and an ESD current dischargingpath is indicated by dash lines when the turn-on speed of Mn1 device 72is slowed down. A corresponding top layout view is shown in FIG. 7(c) inwhich a cross-sectional view along the dashed line B-B′ iscross-referenced in FIG. 7(a).

The operation of the present invention as shown in FIGS. 7(a)-(c) ismore fully discussed hereinafter. The drain of Mn1 finger is fillysurrounded by the P+ pick-up diffusion 70 (base guard ring). Therefore,the parasitic BJT in the Mn1 device 72 has a smaller equivalent baseresistance (Rsub1) in the P-well/P-substrate, because the distance fromthe base region (under the Mn1 channel region) to the grounded P+pick-up diffusion 70 is shortest in the layout structure. The drain ofMn2 fingers are drawn without such additional pick-up diffusion region70, and therefore the parasitic BJT in the Mn2 device 74 has a largerbase resistance (Rsub2). When a positive ESD voltage is attached to theoutput pad as shown in FIG. 7(b), the drains of the Mn1 72 and Mn2 74devices are broken down by the overstress ESD voltage to generate thebreakdown current into the P-well/P-substrate. Because the parasitic BJTin the Mn2 device 74 has a larger base resistance (Rsub2), the Mn2device 74 is first triggered into the snapback region (the parasitic BJTturn-on region) to clamp the overstress voltage on the output pad 78.Since the Mn2 device 74 in the layout structure has a much larger devicedimension, it can sustain a much higher ESD level. On the other hand,the Mn1 device 72 with a smaller device dimension is limited to beturned on during the ESD stress, so that the Mn1 device 72 is notdamaged by the ESD energy and the I/O cell has a higher ESD level.

To achieve this effect, the layout structure of the present inventionincorporates the additional pick-up diffusion 70 (base guard ring)around the used Mn1 device 72, but not around the unused Mn2 device 74.The triggering on the Mn1 device 72 into a snapback region is restrainedor delayed by the additional pick-up diffusion 70, and this allowsenough time for the Mn2 device 74 with a relatively larger devicedimension to be triggered on to discharge ESD current. If the PMOS has asmall Mp1 driving device and a larger unused Mp2 device in the I/O celllayout, the output PMOS device of the present invention can also carriedout by means of pulling up device between VDD and the output pad 78.

As shown in FIGS. 8(a)-(c), another way to limit the turn-on speed ofthe Mn1 device 72 is to change the channel length of Mn1 device 72 andMn2 device 74 in the I/O cell. For instance, the 0.25-μm CMOS processfrom Taiwan Semiconductor Manufacturing Company (TSMC) with a fixedchannel width of 300 μm and afixed drain-contact-to-polygate spacing(DGS) of 1.5 μm can produce a NMOS device with a channel length (L) of0.3 μm or 1.0 μm. The breakdown I-V curves of NMOS devices withdifferent channel lengths have been measured in that the NMOS devicewith 0.3 μm channel length has a breakdown voltage (Vt1) of 9V and asnapback holding voltage (Vh) of 5V, while the NMOS device with 1.0 μmchannel length has a breakdown voltage (Vt1) of 9.7V and a snapbackholding voltage (Vh) of 6.1V. The NMOS devices with different channellengths have different breakdown voltages and snapback holding voltages.The dependence of the breakdown voltages and snapback holding voltageson the NMOS channel length are such that an NMOS device with a shorterchannel length has a lower breakdown voltage (Vt1) and a lower snapbackholding voltage (Vh), which means that it can be turned on faster thanthe NMOS device having a longer channel length. From this perspective,the Mn1 72 and Mn2 74 devices in the I/O cell layout with differentchannel lengths can be drawn to restrain the turn-on of the Mn1 device72. The unused Mn2 device 74 with larger device dimension (channelwidth) is therefore drawn with a shorter channel length in the layout.

FIG. 8(a) is the device cross-sectional view of the Mn1 72 and Mn2 74devices with different channel lengths. As shown in FIG. 8(a), the Mn1device 72 has a longer channel length (L1) 82 relative to the channellength (L2) 84 of the Mn2 device 74. The equivalent circuit isillustrated in FIG. 8(b), and the layout picture is shown in FIG. 8(c).The dashed line C-C′ in FIG. 8(c) corresponds to that of FIG. 8(a). Thechannel length of the Mn1 device 72 is marked as L1 82 and that of theMn2 device 74 is marked as L2 84. In FIG. 8(a) and FIG. 8(c), thechannel length L1 82 is obviously greater than L2 84 in the layout anddevice cross-sectional view.

As shown in FIG. 8(b), the Mn1 device 72 has a longer channel length(L1) than that of the Mn2 device in the layout. Therefore, the drainbreakdown voltage of Mn1 to device 72 is greater than that of the Mn2device 74 which means that during an ESD stress condition, the Mn2device 74 with a lower breakdown voltage is triggered on to bypass theESD current before Mn1 device 72 is turned on.

Additionally, in the semiconductor structure as shown in FIG. 8(a)-(c),the Mn2 device 74 with L2<L1 is triggered to enter its snapback regionand discharge ESD current before the Mn1 device 72 is triggered on. As aresult, the turn-on speed of the Mn1 device 72 is restrained accordingto different channel lengths in the layout structure.

FIGS. 9(a) and 9(b) show a combination which includes the differentchannel lengths and the additional pick-up diffusion region to restrainthe turn-on speed of the Mn1 device. The PMOS device of I/O cell can bealso used by the present invention to restrain the turn-on of Mp1 (withsmaller device dimension). The unused Mp2 with a larger device dimensionhas a relative longer time period to turn on and discharge the ESDcurrent. Therefore, the overall ESD level of the I/O cell with smalloutput current specification can be effectively improved.

One of the preferred embodiments with different channel lengths on theMn1 device has been used in an in-house 0.5 μm bi-directional I/O cellB001H which has a smaller output current driving ability of only 1 mA.The layout view of NMOS part in the I/O cell of this 1-mA cell is shownin FIG. 8(c). The finger of the Mn1 device used for output current has achannel length of 3.2 μm, but those of the unused device (Mn2) have achannel length of only 0.6 μm. The Mn1 device in FIG. 8(c) has a channelwidth of 38 μm, but the Mn2 device has a total channel width of 266 μmin the layout. With restrained layout on the Mn1 device, the ESD currentis mainly discharged by the Mn2 device with a larger device dimension.This invention is also applied to draw the PMOS layout of the same cell.The Mp1, which provides the output current of 1 mA, has a of channellength of 3.0 μm. By contrast, the Mp2 in the same cell layout has achannel of 0.6 μm (i.e. a difference of 2.4 μm). The channel width ofPMOS device Mp1 is 44 μm, and that of PMOS device Mp2 is 396 μm in theB001H cell layout. By restraining to turn on and discharge the ESDcurrent, the overall HBM ESD level of the I/O cell can be effectivelyimproved from 1 kV to greater than 4 kV.

The present invention can be also applied to improve the ESD level ofthe pure input cell, which has multiple fingers placed in parallel inthe layout. The typical input cell used in the I/O cell library is shownin FIG. 10(a), where the layout of NMOS of the pure input cell is drawnin FIG. 10(b). All gates of the parallel fingers in the layout areconnected to a ground (VSS I/O) through a resistor Rw2 102 in FIG. 10(a)or directly connected to ground to turn off the NMOS device. Similarlayout style is also used to realize the Mp2 104 device in the inputcell. This layout style has been generally and widely used in CMOS IC'S.

Although the fingers in the NMOS layout of FIG. 10(b) is verysymmetrical, the fingers are still hard to be uniformly turned on by theESD current under ESD stress. The photo-emission microscope (EMMI)picture of the NMOS in the input cell shows that during the ESD stresscondiction, only several fingers located at the center of the NMOSlayout are turned on to discharge the ESD current. Therefore, the NMOShas a lower ESD level even if the total channel width in the layout islarge enough. Only few fingers at the layout center region are triggeredinto the snapback region, which has a lower holding voltage of 5V thanthe breakdown voltage of 9V. The most others can be triggered on whenthe pad voltage is greater than the drain breakdown voltage (9V). A fewof turned-on fingers clamp the voltage level on the pad to the holdingvoltage of 5V to limits the other fingers to be continually triggered onby the ESD voltage. The channel region of the center fingers in thelayout of FIG. 10(b) has a far spacing to the pick-up diffusion.Therefore, the parasitic BJT of the center fingers has a larger baseresistance (Rsub). With a larger base resistance, the parasitic BJT ofthe center fingers is turned on faster than that of fingers which closeto the two sides, which causes a non-uniform turn-on behavior. When onlyfew center fingers are triggered on to discharge ESD current, the inputcell often has a low ESD level even if it has a total large enoughdevice dimension on the NMOS layout.

The non-uniform turn-on behavior in FIG. 10(a) can be overcome withturn-on restrained layout on the center fingers of the input cell. Thelayout structure with different channel lengths on the input NMOS isshown in FIG. 11(a). The corresponding device structure along the dashedline F-F′ in FIG. 11(a) is shown in FIG. 11(b). In FIGS. 11(a) and (b),the channel length L1 112 of the center fingers are wider than thechannel length L2 114 of the edge fingers. By suitably adjusting thechannel length in layout to compensate the difference on the turn-onspeed of the center fingers, the multiple fingers of the input NMOS canbe uniformly triggered on. Therefore, the input cell has a much higherESD level, and the fingers in the layout are all turned on to dischargeESD current. Of course, the present invention can be also applied to theinput PMOS (Mp2 in FIG. 10(a)), which is often drawn in the same layoutstyle.

To compensate for the base resistance effect, the additional pick-updiffusion regions 122 in FIG. 12(b) are also used to surround the centerfingers in the NMOS layout of the input cell, as that shown in FIGS.12(a) and (b). The device cross-sectional view along the dashed lineG-G's in FIG. 12(a) is shown in FIG. 12(b). With the additional pick-updiffusion region 122, the center fingers have a lower base resistance.Therefore the parasitic BJT of the center fingers have a slower turn-onspeed than before. By using the restrained turn-on method on the centerfingers of the NMOS (or PMOS) layout, the turn-on uniformity among themultiple fingers of input cell can be effectively improved to sustain ahigher ESD level.

In FIG. 13, the center fingers are drawn with both the wider channellength and the additional pick-up diffusion region. By suitablyadjusting these two new inventions, this can better restrain the centerfinger turn-on speed to achieve an overall better ESD performance.

When the CMOS technology scaled down to sub-half-micron regime, thevoltage level of VDD in the chip is also reduced to a lower voltagelevel, such as 3.3V, 2.5V, or 1.8V for core circuits. However, the I/Osignal come from external circuits of chips in a system may havedifferent voltage levels, which may be greater than VDD of the chip.Therefore, the high-voltage-tolerant I/O circuits are designed and usedin such an interface condition. A typical 3V/5V-tolerant I/O circuit isshown in FIG. 14(a), where the NMOS from the pad 140 to VSS often hasstacked device configuration. Such high-voltage-tolerant I/O cells in acell library also have different output current specifications, so thestacked NMOS (Mn1a and Mn1b) devices may have a smaller device dimensionfor the cell with smaller output current driving ability. In the celllayout, the unused fingers of stacked NMOS (Mn2a and Mn2b devices inFIG. 14(a)) in the I/O cell with small output current are turned off infunction but also work as the ESD protection device. To avoid the gatecoupling effect that causes a low ESD level on such a 3V/5V-tolerant I/Ocell, the turn-on restrained method can be also applied on the Mn1a 146and Mn1b 148 NMOS layout as that shown in FIG. 14(b). The polygate(channel length) of the Mn1a 146 device is drawn with a wider width torestrain the turn-on of stacked Mn1a 146 and Mn1b 148 devices in thelayout. Therefore, the Mn2a 142 and Mn2b 144 devices with smallerchannel length can be turned on to discharge the ESD current. Becausethe stacked Mn2a 142 and Mn2b 144 devices have a larger device dimension(channel width), they can sustain a higher ESD level by furtherrestraining the turn-on speed of the stacked Mn1a 146 and Mn1b 148devices. The additional pick-up diffusion can be also used to surroundthese stacked Mn1a. If such 3V/5V-tolerant I/O cell is only used asinput, where the gate of the Mn1a and Mn1b devices are all connected toground, the center fingers of the stacked NMOS layout can be drawn witha wider channel length or surrounded by the additional pick-up diffusionto restrain the turn-on speed of the center fingers. Then, the overallESD level of such a 3V/5V-tolerant input cell can be effectivelyimproved due to the uniform turn-on behavior among the multiple fingersin parallel in the I/O cell layout.

Although a specific form of the present invention has been describedabove and illustrated in the accompanying drawings in order to be moreclearly understood, the above description is made by way of example andnot as a limitation to the scope of the present invention. It isbelieved that various modifications apparent to one of ordinary skill inthe art could be made without departing from the scope of the presentinvention which is to be determined by the following claims.

What is claimed is:
 1. A semiconductor structure for electrostaticdischarge (ESD) protection of a metal oxide semiconductor (MOS)integrated circuit, said semiconductor structure comprising: a substrateof a first conductivity type forming that forms a base for saidsemiconductor structure; a first region of a second conductivity typewithin said substrate for forming that forms a drain of a first MOStransistor; a second region of the second conductivity type within saidsubstrate for forming that forms a source of the first MOS transistor; athird region of the second conductivity type within said substrate forforming that forms a source of a second MOS transistor, wherein and afourth pick up diffusion region of the first conductivity type isdisposed between the second region of said first MOS transistor and thethird region of said second MOS transistor for between the second regionof said first MOS transistor and the third region of said second MOStransistor, wherein the pick up diffusion region surrounding surroundssaid first MOS transistor with an additional laterally, wherein saidsecond MOS transistor is not included within the pick up diffusionregion, wherein the pick up diffusion region is configured to restrainthe a turn on of said first MOS transistor; and wherein the a channellength of said first MOS transistor is longer than the a channel lengthof said second MOS transistor to increase the a drain base voltage ofsaid first MOS transistor.
 2. A semiconductor structure forelectrostatic discharge (ESD) protection of a metal oxide semiconductor(MOS) integrated circuit, said semiconductor structure comprising: asubstrate of a first conductivity type forming that forms a base forsaid semiconductor structure; a first region of a second conductivitytype with said substrate for forming that forms a drain of a first MOStransistor; a second region of he the second conductivity type withinsaid substrate for forming that forms a source of the first MOStransistor; a third region of the second conductivity type within saidsubstrate for forming that forms a source of a second MOS transistor,wherein a fourtha first pick up diffusion region of the firstconductivity type is disposed between the second region ofdisposedbetween the second region of the first MOS transistor and the thirdregion of the second MOS transistor, wherein the first pick up diffusionregion surrounds said first MOS transistor and the third region of saidsecond MOS transistor for surrounding said first MOS transistor with anadditional pick up diffusion to restrain thelaterally, wherein the firstpick up diffusion region does not surround said second MOS transistor,wherein the first pick up diffusion region is configured to restrain aturn on of said first MOS transistor;, a first channel region disposedbetween said first and second regions of said first MOS transistor; anda second channel region disposed adjacent to said third region of saidsecond MOS transistor, wherein said a first channel length of said firstchannel region is longer than the a channel length of said secondchannel region to increase the a drain base breakdown voltage of saidfirst MOS transistor.
 3. A semiconductor structure for electrostaticdischarge (ESD) protection of a metal oxide semiconductor (MOS)integrated circuit, said semiconductor substrate comprising: a substrateof a first conductivity type that forming forms a base for saidsemiconductor structure; a pair of first regions of a secondconductivity type within said substrate for defining that define a firstchannel region of the second conductivity type for a first MOStransistor; a pair of second regions of the second conductivity typewithin said substrate for defining that defines a second channel regionof the second conductivity type for a second MOS transistor, wherein thea channel length of said first channel region is greater than the achannel length of said second channel region to reduce a turn on speedof said first MOS transistor; and a pick up diffusion region of thefirst conductivity type that surrounds said first MOS transistor on foursides, wherein the second MOS transistor is not surrounded by the pickup diffusion region, the pick up diffusion region including a thirdregion of the first conductivity type between thea source side of saidfirst regions and thea source side of said second regions forsurrounding said first MOS transistor with an additional pick updiffusion to further restrain the a turn on speed of said first MOStransistor.
 4. A semiconductor structure for electrostatic discharge(ESD) protection of a metal oxide semiconductor (MOS) integratedcircuit, said semiconductor structure comprising: a p type substrate offorming that forms a base for said semiconductor structure; a first N+region within said substrate for forming that forms a drain of a firstMOS transistor; a second N+ region within said substrate for formingthat forms a source of the first MOS transistor; a third N+ regionwithin said substrate for forming that forms a source of a second MOStransistor, and a P+ region forming a pick up diffusion region having afirst portion that surrounds said first MOS transistor laterally anddoes not surround the second MOS transistor, wherein a the P+ region isdisposed between the second N+ region of said first MOS transistor andthe third N+ region of said second MOS transistor for surrounding saidfirst MOS transistor with an additional to provide a side of the pick updiffusion to restrain the turn on speed of said first MOS transistor,and wherein the a channel length of said first MOS transistor is longerthan the a channel length of said second MOS transistor to increase adrain base breakdown voltage of said first MOS transistor.
 5. Asemiconductor structure for electrostatic discharge (ESD) protection ofa metal oxide semiconductor (MOS) integrated circuit, said semiconductorstructure comprising: a p type substrate of forming that forms a basefor said semiconductor structure; a first N+ region within saidsubstrate for forming that forms a drain of a first MOS transistor; asecond N+ region within said substrate for forming that forms a sourceof the first MOS transistor; a third N+ region within said substrate forforming that forms a source of a second MOS transistor, and a P+ regionthat forms a pick up diffusion region, wherein a first portion of thepick up diffusion region surrounds said first MOS transistor on foursides, wherein said second MOS transistor is not located within thefirst portion of the pick up diffusion region, wherein a side of the P+region is disposed between the second N+ region of said first MOStransistor and the third N+ region of said second MOS transistor forsurrounding said first MOS transistor with an additional pick upproviding a portion of the pick up diffusion to region for restrainrestraining the a turn on speed of said first MOS transistor; a first nchannel region having a first channel length and disposed between saidfirst and second regions of said first MOS transistor; and a second nchannel region having a second channel length disposed adjacent to saidthird region of said second MOS transistor, wherein said first channellength is longer than said second channel length to further increase thea drain base breakdown voltage of said first MOS transistor.
 6. Asemiconductor structure for electrostatic discharge (ESD) protection ofa metal oxide semiconductor (MOS) integrated circuit, said semiconductorstructure comprising: a p type substrate forming that forms a base forsaid semiconductor structure; a pair of first N+ regions within saidsubstrate for defining that defines a first n channel region for a firstMOS transistor; a pair of second N+ regions within said substrate fordefining that defines a second n channel region for a second MOStransistor, wherein the a channel length of said first channel isgreater than the a channel length of said second channel; and a third P+region that defines first and second pick up diffusion regions, whereinsaid first pick up diffusion region surrounds said first MOS transistorlaterally and wherein said second pick up diffusion region surroundssaid second MOS transistor laterally, wherein a portion of the P+ regionis part of said first and said second pick up diffusion regions and isdisposed between the a source region of said first N+ regions and the asource region of said second N+ regions for surrounding said to separatethe first MOS transistor from the second MOS transistor and forproviding said first MOS transistor with an additional the first pick updiffusion to further restrain the a turn on of said first MOStransistor.
 7. A semiconductor structure for electrostatic discharge(ESD) protection of a metal oxide semiconductor (MOS) integratedcircuit, said semiconductor structure connected between an input pad andan internal circuit of said integrated circuit, said semiconductorstructure comprising: a substrate of a first conductivity type formingthat forms a base for said semiconductor structure; a first channelformed between a pair of first regions of a second conductivity typewithin said substrate for a first MOS transistor; and a second channelformed between formed between a pair of second regions of a secondconductivity type within said substrate for a second MOS transistor, andwherein an additionala pick up diffusion region that laterally surroundsan area that includes said first MOS transistor and does not includesaid second MOS transistor, wherein a portion of the pick up diffusionregion is disposed between the source region of said first regions andthe source region of said second regions for surrounding said first MOStransistor with an additionalto provide a portion of the pick updiffusion tofor restrain restraining thea turn on of said first MOStransistor, wherein the a channel length of said first channel is longerthan the a channel length of said second channel to increase a drainbase breakdown voltage of said first MOS transistor.
 8. A semiconductorstructure for electrostatic discharge (ESD) protection of a high voltagetolerant I/O cells with stacked NMOS or PMOS integrated circuit, saidsemiconductor structure connected between a pre driver circuit and aninput/output pad of said integrated circuit and, said semiconductorstructure comprising: a substrate of a first conductivity type forming abase for said semiconductor structure; a first channel formed between apair of first regions of a second conductivity type within saidsubstrate for a first MOS transistor which is stacked on a third MOSFETof a second conductivity type; and a second channel formed between apair of second regions of a second conductivity type within saidsubstrate for a second MOS transistor which is stacked on a fourthMOSFET of a second conductivity type, wherein, wherein a channel lengthof said first channel is longer than a channel length of said secondchannel to increase a drain base breakdown voltage of said first MOStransistor; an additionala pick up diffusion region is disposed betweenthe source region of said first regions and the source of said secondregions for surroundinghaving a first portion that surrounds said firstMOS transistor with an additionalin plan view, and having a secondportion that surrounds said second MOS transistor in plan view, whereinthe first and second portions of the pick up diffusion toregion have acommon part for restrainrestraining the turn on of said first MOStransistor, the common part being disposed between a source region ofsaid first regions and a source of said second regions, wherein part ofthe first portion of the pick up diffusion region is not part of thesecond portion of the pick up diffusion region, and wherein part of thesecond portion of the pick up diffusion region is not part of the firstportion of the pick up diffusion region.
 9. The semiconductor structureof claim 8, wherein the channel length of said first channel is longerthan the channel length of said second channel to increase the drainbase breakdown voltage of said first MOS transistor.
 10. An apparatusfor electrostatic discharge protection of a metal oxide semiconductor(CMOS) circuit, said apparatus comprising: a semiconductor substrate; afirst MOS type transistor disposed on said semiconductor substrate; anda second MOS type transistor disposed proximate to said first MOS typetransistor on said semiconductor substrate, and a pick up diffusionregion having a first portion that laterally surrounds an area includingsaid first MOS transistor and excluding said second MOS transistor,wherein the pick up diffusion region has a second portion that laterallysurrounds said second MOS transistor, wherein said first and secondportions share a common side of said pick up diffusion region that isdisposed between a source of the first MOS type transistor and a sourceof the second MOS type transistor; wherein a channel length of saidfirst MOS type transistor is longer than a channel length of said secondMOS type transistor such that a drain-base voltage of said first MOStype transistor is increased with respect to a drain-base voltage ofsaid second MOS type transistor.
 11. A semiconductor structure forelectrostatic discharge (ESD) protection of a metal oxide semiconductor(MOS) integrated circuit, said semiconductor structure comprising: asubstrate of a first conductivity type that forms a base for saidsemiconductor structure; a first region of a second conductivity typewithin said substrate that forms a drain of a first MOS transistor; asecond region of the second conductivity type within said substrate thatforms a source of the first MOS transistor; means for restraining theturn on of said first MOS transistor, said means for restrainingsurrounding said first MOS transistor on four sides; a first channelregion disposed between said first and second regions of said first MOStransistor; and a second channel region disposed adjacent to a thirdregion of a second MOS transistor that forms a source of the second MOStransistor, wherein a first channel length of said first channel regionis longer than a channel length of said second channel region toincrease a drain-base breakdown voltage of said first MOS transistor;wherein the means for restraining is disposed between the second regionand the third region.